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| EIB3439-4P UPDATED 03/02/2006 3.40-3.90 GHz 4W Internally Matched Power FET FEATURES * * * * * * 3.40-3.90 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.5 dBm Output Power at 1dB Compression 12.0 dB Power Gain at 1dB Compression 30% Power Added Efficiency Non-Hermetic Metal Flange Package .827 .669 .120 MIN Excelics EIC3439-4P .120 MIN .020 .400 YYWW SN SN .126 .508 .450 .052 .084 ALL DIMENSIONS IN INCHES .161 .004 .105 ELECTRICAL CHARACTERISTICS (Ta = 25C) SYMBOL P1dB G1dB G PAE Id1dB IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 3.40-3.90GHz VDS = 8 V, IDSQ 1600mA Gain at 1dB Compression f = 3.40-3.90GHz VDS = 8 V, IDSQ 1600mA Gain Flatness f = 3.40-3.90GHz VDS = 8 V, IDSQ 1600mA Power Added Efficiency at 1dB Compression f = 3.40-3.90GHz VDS = 8 V, IDSQ 1600mA Drain Current at 1dB Compression Saturated Drain Current Pinch-off Voltage Thermal Resistance2 f = 3.40-3.90GHz VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 28 mA Caution! ESD sensitive device. MIN 35.5 11.0 TYP 36.5 12.0 0.6 30 1700 2800 -2.0 5.5 2000 3500 -3.5 6.0 o MAX UNITS dBm dB dB % mA mA V C/W Note: 1) Tested with 100 Ohm gate resistor. 2) Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING1,2 SYMBOL VDS VGS IGSF IGSR PIN TCH TSTG PT CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Forward Gate Current Reserve Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 12 V -6.0 V 43.2 mA -7.2 mA 36.5 dBm 175C -65/+175C 25 W CONTINUOUS2 8V -4.0 V 14.4 mA -2.4 mA @ 3dB compression 175C -65/+175C 25 W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 1 Revised March 2006 |
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